In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possi ble to describe all this work in a monograph of this size, Compound Se miconductors Strained Layers and Devices provides an overview with suf ficient detail to cover all the essential aspects of recent developmen ts in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi s trained layers are discussed for comparison to clarify the underlying physics.