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Nanoscale Electronic Devices and Their Applications / Edition 1
Barnes and Noble
Nanoscale Electronic Devices and Their Applications / Edition 1
Current price: $96.99
Barnes and Noble
Nanoscale Electronic Devices and Their Applications / Edition 1
Current price: $96.99
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Nanoscale Electronic Devices and Their Applications
helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:
Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices
Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs
Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices
Includes rigorous mathematical derivations of the semiconductor physics
Illustrates major concepts thorough discussions and various diagrams
helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:
Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices
Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs
Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices
Includes rigorous mathematical derivations of the semiconductor physics
Illustrates major concepts thorough discussions and various diagrams